The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2011

Filed:

Oct. 23, 2008
Applicants:

Tao Jing, Fremont, CA (US);

Maidong Dai, San Jose, CA (US);

Inventors:

Tao Jing, Fremont, CA (US);

Maidong Dai, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrostatic discharge (ESD) protection circuit configured completely inside one of a power pad and an I/O pad of an electronic circuit, the ESD protection circuit comprising an electrostatic discharge (ESD) circuit that, when activated, discharges an ESD from a first voltage bus to a second voltage bus. The second voltage bus is at a lower electrical potential than the first voltage bus. An ESD discharge control circuit in electrical connection with the ESD discharge circuit that controls the activation of the ESD discharge circuit and including an NMOS transistor and an electrical node. The NMOS transistor regulating a rate of voltage decay of the electrical node from a predetermined high voltage level to a lower voltage level, the regulation of the rate of voltage decay of the electrical node is non-linear. The activation of the ESD discharge circuit determined by the rate of voltage decay of the electrical node.


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