The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2011

Filed:

Jul. 27, 2010
Applicants:

Choongyeun Cho, Hopewell Junction, NY (US);

Daeik Kim, Beacon, NY (US);

Jonghae Kim, Fishkill, NY (US);

Moon Ju Kim, Wappingers Falls, NY (US);

Inventors:

Choongyeun Cho, Hopewell Junction, NY (US);

Daeik Kim, Beacon, NY (US);

Jonghae Kim, Fishkill, NY (US);

Moon Ju Kim, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Circuits and methods are provided for facilitating transitioning of a digital circuit from backgate biased standby mode to active mode. The digital circuit includes a semiconductor substrate, multiple n-channel transistors disposed at least partially in one or more p-type wells in the semiconductor substrate, multiple p-channel transistors disposed at least partially in one or more n-type wells in the semiconductor substrate, and a backgate control circuit. The backgate control circuit is electrically coupled to the p-type well(s) and to the n-type well(s) to facilitate transitioning of the multiple n-channel transistors and the multiple p-channel transistors from backgate biased standby mode to active mode by automatically shunting charge from the n-type well(s) to the p-type well(s) until a well voltage threshold is reached indicative of a completed transition of the transistors from backgate biased standby mode to active mode.


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