The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Apr. 25, 2008
Taiko Motoi, Atsugi, JP;
Kenji Tamamori, Ebina, JP;
Shinan Wang, Kashiwa, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Nobuki Yoshimatsu, Cambridge, GB;
Taiko Motoi, Atsugi, JP;
Kenji Tamamori, Ebina, JP;
Shinan Wang, Kashiwa, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Nobuki Yoshimatsu, Cambridge, GB;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 μm in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.