The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Oct. 28, 2009
Richard J. Carter, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Richard J. Carter, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate, a short channel (SC) device, and a long channel (LC) device. The short channel device includes an SC gate insulator overlying a first portion of the substrate, an SC metal gate overlying the SC gate insulator, a polycrystalline silicon layer overlying the metal gate, and a silicide layer formed on the polycrystalline silicon layer. The long channel (LC) device includes an LC gate insulator overlying a second portion of the substrate and an LC metal gate overlying the LC gate insulator. An etch stop layer overlies an upper surface of the substrate, and an interlayer dielectric overlies an upper surface of the etch stop layer. An SC cap is disposed in the interlayer dielectric, overlies the SC device, and is formed substantially from the same metal as is the LC metal gate.