The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Apr. 17, 2008
Applicants:
Hung-lin Shih, Hsinchu, TW;
Tsan-chi Chu, Hsinchu, TW;
Inventors:
Hung-Lin Shih, Hsinchu, TW;
Tsan-Chi Chu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory cell is described, including a semiconductor substrate, two separate charge trapping structures on the substrate, first spacers at least on the opposite sidewalls of the two charge trapping structures, a gate dielectric layer on the substrate between the two charge trapping structures, a gate on the two charge trapping structures and the gate dielectric layer, and two doped regions in the substrate beside the gate.