The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Jul. 17, 2008
Niu Jin, San Jose, CA (US);
Paul R. Berger, Columbus, OH (US);
Philip E. Thompson, Sprinfield, VA (US);
Niu Jin, San Jose, CA (US);
Paul R. Berger, Columbus, OH (US);
Philip E. Thompson, Sprinfield, VA (US);
The Ohio State University Research Foundation, Columbus, OH (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.