The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Feb. 10, 2006
Applicants:
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ushiku, JP;
Satoru Nagao, Ushiku, JP;
Inventors:
Assignee:
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compoundis formed directly on a channelof a transistorcomprising a source electrode, a drain electrode, a gate electrodeand the n-type channelhaving a nanotube-shaped structure and provided between the source electrodeand the drain electrode