The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Dec. 19, 2007
Tadayoshi Watanabe, Kanagawa-ken, JP;
Yoshiaki Shimooka, Tokyo, JP;
Naofumi Nakamura, Tokyo, JP;
Hayato Nasu, Oita-ken, JP;
Tadayoshi Watanabe, Kanagawa-ken, JP;
Yoshiaki Shimooka, Tokyo, JP;
Naofumi Nakamura, Tokyo, JP;
Hayato Nasu, Oita-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one aspect of the present invention, a method of fabricating a semiconductor device may include forming a sacrificial film on a substrate, forming an insulating film on the sacrificial film, forming a plurality of first openings in the sacrificial film and the insulating film in a first region and a second region, depositing a conductive material in the plurality of the first openings, forming a second opening in the insulating film in the second region so as to expose the sacrificial film, and removing the sacrificial film in the first region via the second opening in the second region.