The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Aug. 20, 2008
Applicants:
Takayuki Enda, Fukushima-Ken, JP;
Tatsuya Inoue, Fukushima-Ken, JP;
Naoki Takeguchi, Fukushima-Ken, JP;
Inventors:
Takayuki Enda, Fukushima-Ken, JP;
Tatsuya Inoue, Fukushima-Ken, JP;
Naoki Takeguchi, Fukushima-Ken, JP;
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.