The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2011

Filed:

Feb. 12, 2008
Applicants:

Byron Lovell Williams, Plano, TX (US);

Maxwell Walthour Lippitt, Iii, Rockwall, TX (US);

Betty Mercer, Plano, TX (US);

Scott Montgomery, Rowlett, TX (US);

Binghua HU, Plano, TX (US);

Inventors:

Byron Lovell Williams, Plano, TX (US);

Maxwell Walthour Lippitt, III, Rockwall, TX (US);

Betty Mercer, Plano, TX (US);

Scott Montgomery, Rowlett, TX (US);

Binghua Hu, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrically tied to an associated electrode. The method also includes alternately depositing multiple layers of dielectric between the multiple layers of metal and coupling a bottom layer of the multiple layers of metal to a contact node in a top metal layer of the integrated circuit.


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