The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7898873 B1

Date of Patent:

Mar. 01, 2011

Filed:

Jun. 16, 2009

Window enlargement by selective erase of non-volatile memory cells

Applicants:

Po Chou Chen, Danshui Town, Taipei County, TW;

I Chen Yang, Changhua, TW;

Hui Chih Lin, Toufen Township, Miaoli County, TW;

Yao Wen Chang, Hsinchu, TW;

Inventors:

Po Chou Chen, Danshui Town, Taipei County, TW;

I Chen Yang, Changhua, TW;

Hui Chih Lin, Toufen Township, Miaoli County, TW;

Yao Wen Chang, Hsinchu, TW;

Assignee:

Macronix International Co., Ltd., Hsinchu, TW;

Attorney:

Stout, Uxa, Buyan & Mullins, LLP

Primary Examiner:

Tan T Nguyen

Int. Cl.

CPC ...

G11C 16/00 (2006.01);

U.S. Cl.

CPC ...

Abstract

A method is described for enlarging a programming window of charge trapping memory cells in a virtual ground charge trapping memory EEPROM array. The method substantially eliminates second bit effects and program disturbances to nearby charge trapping memory cells.

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Chen, Po. (2011). Window enlargement by selective erase of non-volatile memory cells (U.S. Patent No. 7898873). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7898873

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