The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Mar. 09, 2007
Ashok Kumar Kapoor, Palo Alto, CA (US);
Robert Strain, San Jose, CA (US);
Reuven Marko, Netanya, IL;
Ashok Kumar Kapoor, Palo Alto, CA (US);
Robert Strain, San Jose, CA (US);
Reuven Marko, Netanya, IL;
Semi Solution, LLC, Los Gatos, CA (US);
Abstract
Metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, that are area efficient, and that exhibit improved drive strength and leakage current that are disclosed. A dynamic threshold voltage control scheme is used that does not require a change to existing MOS technology processes. Threshold voltage of the transistor is controlled, such that in the Off state, the threshold voltage of the transistor is set high, keeping the transistor leakage to a small value. The advantages provided by apply to dynamic logic, as well as in the specific well separation imposed by design rules because well potential difference are lower than the supply voltage swing.