The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Aug. 02, 2007
Harry Chuang, Austin, TX (US);
Kong-beng Thei, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Jung-hui Kao, Hsin-Chu, TW;
Sheng-chen Chung, Hsin-Chu, TW;
Chung Long Cheng, Hsin-Chu, TW;
Shun-jang Liao, Pingjhen, TW;
Harry Chuang, Austin, TX (US);
Kong-Beng Thei, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Jung-Hui Kao, Hsin-Chu, TW;
Sheng-Chen Chung, Hsin-Chu, TW;
Chung Long Cheng, Hsin-Chu, TW;
Shun-Jang Liao, Pingjhen, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a contact extending from a top surface of the first ILD into the first ILD; a second ILD over the first ILD; a bottom inter-metal dielectric (IMD) over the second ILD; and a dual damascene structure comprising a metal line in the IMD and a via in the second ILD, wherein the via is connected to the contact.