The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jul. 16, 2007
Chih-nan Cheng, I-Lan Hsien, TW;
Chih-Nan Cheng, I-Lan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A MOS device includes a semiconductor substrate having a first conductive type, a source region, a gate structure, and a drain region having a second conductive type. The gate structure is formed on the semiconductor substrate and substantially parallel to a first direction. The source region and the drain region are both disposed in the semiconductor substrate, and on two opposite sides of the gate structure. The source region includes at least a source doped region having the second conductive type, and at least a source contact region having the first conductive type, and the source doped region and the source contact region are alternately arranged along the first direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile