The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 18, 2007
Weize Xiong, Austin, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Angelo Pinto, Allen, TX (US);
Rick L. Wise, Fairview, TX (US);
Weize Xiong, Austin, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Angelo Pinto, Allen, TX (US);
Rick L. Wise, Fairview, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.