The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Aug. 20, 2009
Joerg Appenzeller, Valhalla, NY (US);
Phaedon Avouris, Yorktown Heights, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Philip G. Collins, Oakland, CA (US);
Richard Martel, Peekskill, NY (US);
Hon-sum Philip Wong, Chappaqua, NY (US);
Joerg Appenzeller, Valhalla, NY (US);
Phaedon Avouris, Yorktown Heights, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Philip G. Collins, Oakland, CA (US);
Richard Martel, Peekskill, NY (US);
Hon-Sum Philip Wong, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.