The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Nov. 24, 2008
Eun-ji Jung, Gyeonggi-do, KR;
Dae-yong Kim, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Woong-hee Sohn, Seoul, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Jang-hee Lee, Gyeonggi-do, KR;
Eun-ok Lee, Gyeonggi-do, KR;
Jeong-gil Lee, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Dae-yong Kim, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Woong-hee Sohn, Seoul, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Jang-hee Lee, Gyeonggi-do, KR;
Eun-ok Lee, Gyeonggi-do, KR;
Jeong-gil Lee, Gyeonggi-do, KR;
Abstract
A plurality of spaced-apart conductor structures is formed on a semiconductor substrate, each of the conductor structures including a conductive layer. Insulating spacers are formed on sidewalls of the conductor structures. An interlayer-insulating film that fills gaps between adjacent ones of the insulating spacers is formed. Portions of the interlayer-insulating layer are removed to expose upper surfaces of the conductive layers. Respective epilayers are grown on the respective exposed upper surfaces of the conductive layers and respective metal silicide layers are formed from the respective epilayers.