The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Dec. 03, 2008
Toyonori Eto, Tokyo, JP;
Toyonori Eto, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method of forming a semiconductor device may include, but is not limited to, the following processes. A second insulating film may be formed over a first insulating film. At least one through-hole may be formed, which penetrates the first and second insulating films. At least one first electrode may be formed, which extends at least along the side wall of the at least one through-hole. The first inter-layer insulator may be removed, while using the second insulating film as a temporary supporter that supports the at least one first electrode. At least one permanent supporter may be formed, which supports the at least one first electrode. The second insulating film as the temporary supporter may be removed, while leaving the at least one permanent supporter to support the at least one first electrode.