The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
May. 16, 2008
Sunil Mehta, San Jose, CA (US);
Sunil Mehta, San Jose, CA (US);
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Abstract
A high voltage transistor exhibiting an improved breakdown voltage and related methods are provided. For example, a method of manufacturing an integrated circuit includes etching a poly silicon layer to provide a gate stacked above a floating gate of a flash memory cell. A source and a drain of the flash memory cell are implanted in a substrate. The poly silicon layer is etched to provide a gate of a high voltage transistor. Lightly doped drain (LDD) implants are provided in source/drain regions of the high voltage transistor in the substrate. An annealing operation is performed on the integrated circuit, wherein the annealing causes each of the LDD implants to form a graded junction in relation to a channel in the substrate between the LDD regions, and further causes sidewalls to oxidize on the gates of the flash memory cell and on the gate of the high voltage transistor.