The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Mar. 13, 2007
Applicants:

Hiromi Yuasa, Yokohama, JP;

Masatoshi Yoshikawa, Yokohama, JP;

Yuzo Kamiguchi, Yokohama, JP;

Hitoshi Iwasaki, Yokohama, JP;

Masashi Sahashi, Yokohama, JP;

Inventors:

Hiromi Yuasa, Yokohama, JP;

Masatoshi Yoshikawa, Yokohama, JP;

Yuzo Kamiguchi, Yokohama, JP;

Hitoshi Iwasaki, Yokohama, JP;

Masashi Sahashi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeCoNi(where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.


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