The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7893442 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 22, 2011

Filed:

Feb. 06, 2007
Applicants:

Dong-sik Shim, Yongin-si, KR;

Hyung Choi, Yongin-si, KR;

Young-hoon Min, Yongin-si, KR;

Inventors:

Dong-sik Shim, Yongin-si, KR;

Hyung Choi, Yongin-si, KR;

Young-hoon Min, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 21/44 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.


Find Patent Forward Citations

Shim, Dong-sik. (2011). Schottky diode having low breakdown voltage and method for fabricating the same (U.S. Patent No. 7893442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7893442

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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