The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jul. 21, 2005
Shunpei Yamazaki, Tokyo, JP;
Hisashi Ohtani, Tochigi, JP;
Masaaki Hiroki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Aiko Shiga, Kanagawa, JP;
Mai Akiba, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hisashi Ohtani, Tochigi, JP;
Masaaki Hiroki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Aiko Shiga, Kanagawa, JP;
Mai Akiba, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.