The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Dec. 20, 2006
Seetharaman Sridhar, Richardson, TX (US);
Majid Mansoori, Dallas, TX (US);
Seetharaman Sridhar, Richardson, TX (US);
Majid Mansoori, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A methodfor forming a transistor's drain extensionand recessed strained epi regionswith a single mask step. In an example embodiment, the methodmay include forming a patterned photoresist layerover a protection layerin a NMOS regionand then etching exposed portions of the protection layerin the PMOS regionto form extension sidewallson the transistorsin the PMOS regionplus a protective hardmaskover the NMOS region. The methodmay further include forming the extension regionsfor the PMOS region transistors, performing a recess etchof active regionsof the PMOS region transistors, and forming the recessed strained epi regions