The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Sep. 16, 2008
Applicant:
Hiroshi Kujirai, Tokyo, JP;
Inventor:
Hiroshi Kujirai, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Chuo-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device is provided. A hollowed portion is formed over an active region of a semiconductor substrate. The bottom of the hollowed portion is lowered in level than the surface of an isolation region of the substrate. A first mask is formed in the hollowed portion, except on a side region that is adjacent to the boundary between the active region and the isolation region. A trench is formed in the side region of the active region by using the first mask and the isolation region as a mask.