The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jan. 21, 2005
Daniel C. Edelstein, White Plains, NY (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Michael Lane, Cortlandt Manor, NY (US);
Robert D. Miller, San Jose, CA (US);
Deborah A. Neumayer, Danbury, CT (US);
Son Van Nguyen, Yorktown Heights, NY (US);
Daniel C. Edelstein, White Plains, NY (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Michael Lane, Cortlandt Manor, NY (US);
Robert D. Miller, San Jose, CA (US);
Deborah A. Neumayer, Danbury, CT (US);
Son Van Nguyen, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CHfunctional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH]— where n is greater than or equal to 1, HC═CH, C═CH, C≡C or a [S]linkage, where n is a defined above.