The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Sep. 12, 2007
David Wei, Mountain House, CA (US);
Howard Dang, San Jose, CA (US);
Masahiro Watanabe, Fort Collins, CO (US);
Sean Kang, San Ramon, CA (US);
Kenji Takeshita, Sunnyvale, CA (US);
Mayumi Block, Sunnyvale, CA (US);
Stephen Sirard, San Jose, CA (US);
Eric Hudson, Berkeley, CA (US);
David Wei, Mountain House, CA (US);
Howard Dang, San Jose, CA (US);
Masahiro Watanabe, Fort Collins, CO (US);
Sean Kang, San Ramon, CA (US);
Kenji Takeshita, Sunnyvale, CA (US);
Mayumi Block, Sunnyvale, CA (US);
Stephen Sirard, San Jose, CA (US);
Eric Hudson, Berkeley, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.