The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Dec. 21, 2005
Hee Sik Park, Chungcheongbuk-do, KR;
Keon Soo Shim, Kyeongki-do, KR;
Jong Soon Leem, Kyeongki-do, KR;
Hee Sik Park, Chungcheongbuk-do, KR;
Keon Soo Shim, Kyeongki-do, KR;
Jong Soon Leem, Kyeongki-do, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A memory device capable of enlarging an interval between a source selection transistor and a memory cell adjacent to the source selection transistor, enlarging an interval between a drain selection transistor and a memory cell adjacent to the drain selection transistor, or enlarging the intervals between the source selection transistor and the memory cell adjacent to the source selection transistor and between the drain selection transistor and the memory cell adjacent to the drain selection transistor, prevents the memory cell adjacent to the source or drain selection transistor from being degraded in programming speed due to program disturbance.