The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7889317 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 15, 2011

Filed:

Mar. 19, 2008
Applicants:

Toshiharu Furukawa, Essex Junction, VT (US);

Mark C. Hakey, Fairfax, VT (US);

Steven J. Holmes, Guilderland, NY (US);

David V. Horak, Essex Junction, VT (US);

Peter H. Mitchell, Jericho, VT (US);

Inventors:

Toshiharu Furukawa, Essex Junction, VT (US);

Mark C. Hakey, Fairfax, VT (US);

Steven J. Holmes, Guilderland, NY (US);

David V. Horak, Essex Junction, VT (US);

Peter H. Mitchell, Jericho, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.


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