The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7889255 B1

Date of Patent:

Feb. 15, 2011

Filed:

Oct. 18, 2005

Solid-state imaging device comprising a signal storage section including a highly doped area

Applicants:

Ikuko Inoue, Yokohama, JP;

Hirofumi Yamashita, Fujisawa, JP;

Nagataka Tanaka, Yokohama, JP;

Hisanori Ihara, Yokohama, JP;

Tetsuya Yamaguchi, Tokyo, JP;

Hiroshige Goto, Yokohama, JP;

Inventors:

Ikuko Inoue, Yokohama, JP;

Hirofumi Yamashita, Fujisawa, JP;

Nagataka Tanaka, Yokohama, JP;

Hisanori Ihara, Yokohama, JP;

Tetsuya Yamaguchi, Tokyo, JP;

Hiroshige Goto, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Sinh Tran

Assistant Examiner:

Hung H Lam

Int. Cl.

CPC ...

H04N 3/14 (2006.01); H04N 5/335 (2006.01);

U.S. Cl.

CPC ...

Abstract

Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

Find Patent Forward Citations

Inoue, Ikuko. (2011). Solid-state imaging device comprising a signal storage section including a highly doped area (U.S. Patent No. 7889255). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7889255

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