The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Oct. 24, 2005
Kouros Ghandehari, Santa Clara, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
David Matsumoto, San Jose, CA (US);
Christopher H. Raeder, Austin, TX (US);
Christopher Foster, Austin, TX (US);
Weidong Qian, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Kouros Ghandehari, Santa Clara, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
David Matsumoto, San Jose, CA (US);
Christopher H. Raeder, Austin, TX (US);
Christopher Foster, Austin, TX (US);
Weidong Qian, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (SiN) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or SiNand forming a second layer of anti-reflective material over the first layer. The method also includes using the first layer, second layer and layer of SiON, SiRN or SiNas a mask when etching a pattern in the layer of semiconducting material.