The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Sep. 21, 2006
Takashi Mikami, Kyoto, JP;
Atsushi Tomyo, Kyoto, JP;
Kenji Kato, Kyoto, JP;
Eiji Takahashi, Kyoto, JP;
Tsukasa Hayashi, Kyoto, JP;
Takashi Mikami, Kyoto, JP;
Atsushi Tomyo, Kyoto, JP;
Kenji Kato, Kyoto, JP;
Eiji Takahashi, Kyoto, JP;
Tsukasa Hayashi, Kyoto, JP;
Nissin Electric Co., Ltd., Kyoto, JP;
Abstract
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.