The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2011

Filed:

Jul. 30, 2008
Applicants:

Osamu Arisumi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Inventors:

Osamu Arisumi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second insulating film containing silicon oxide as a main ingredient from the polymer solution layer, wherein forming the second insulating film includes forming silicon oxide by a reaction between the polymer and water adhered to the first insulating film.


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