The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Mar. 19, 2008
Leland Chang, New York, NY (US);
Robert H. Dennard, Croton-on-Hudson, NY (US);
David M. Fried, Brewster, NY (US);
Wing Kin Luk, Chappaqua, NY (US);
Leland Chang, New York, NY (US);
Robert H. Dennard, Croton-on-Hudson, NY (US);
David M. Fried, Brewster, NY (US);
Wing Kin Luk, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An area-efficient gated diode includes a semiconductor layer of a first conductivity type, an active region of a second conductivity type formed in the semiconductor layer proximate an upper surface thereof, and at least one trench electrode extending vertically through the active region and at least partially into the semiconductor layer. A first terminal of the gated diode is connected to the trench electrode, and a second terminal is connected to the active region. The gated diode is operative in one of at least first an second modes as a function of a voltage potential applied between the first and second terminals. The first mode is characterized by the creation of an inversion layer in the semiconductor layer surrounding the trench electrode. The gated diode has a first capacitance in the first mode and a second capacitance in the second mode, the first capacitance being greater than the second capacitance.