The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Jan. 10, 2007
Hans-joachim Schulze, Ottobrunn, DE;
Franz-josef Niedernostheide, Muenster, DE;
Uwe Kellner-werdehausen, Leutenbach, DE;
Reiner Barthelmess, Soest, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Uwe Kellner-Werdehausen, Leutenbach, DE;
Reiner Barthelmess, Soest, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (), in which a p-doped emitter (), an n-doped base (), a p-doped base () and an n-doped main emitter () are arranged successively in a vertical direction (v). The p-doped emitter () has a number of heavily p-doped zones () having a locally increased p-type doping.