The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Dec. 28, 2006
Hidekazu Kitahara, Toyama, JP;
Kenji Noda, Osaka, JP;
Kenichi Asahi, Toyama, JP;
Naohiko Ujimaru, Toyama, JP;
Hirofumi Fukumoto, Toyama, JP;
Hidekazu Kitahara, Toyama, JP;
Kenji Noda, Osaka, JP;
Kenichi Asahi, Toyama, JP;
Naohiko Ujimaru, Toyama, JP;
Hirofumi Fukumoto, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied developer. After the development, the substrate is rotated so that the developer and the resist dissolved in the developer are removed. Then, a rinsing solution is supplied onto the resist film subjected to development and the substrate is rotated, thereby washing out the developer and the resist dissolved in the developer. The rotation speed of the substrate in removing the developer is a half or less of the rotation speed of the substrate in the rinsing step of washing out the resist.