The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
May. 15, 2006
Wen-miao Lo, Kaohsiung, TW;
Lurng-sheng Lee, Hsinchu County, TW;
Pei-ren Jeng, Hsinchu, TW;
Cha-hsin Lin, Tainan, TW;
Ching-chiun Wang, Miaoli County, TW;
Wen-Miao Lo, Kaohsiung, TW;
Lurng-Sheng Lee, Hsinchu County, TW;
Pei-Ren Jeng, Hsinchu, TW;
Cha-Hsin Lin, Tainan, TW;
Ching-Chiun Wang, Miaoli County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.