The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jan. 31, 2007
Jason P. Henning, Carrboro, NC (US);
Allan Ward, Durham, NC (US);
Alexander Suvorov, Durham, NC (US);
Jason P. Henning, Carrboro, NC (US);
Allan Ward, Durham, NC (US);
Alexander Suvorov, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A unit cell of a metal-semiconductor field-effect transistor (MESFET) includes a semi-insulating substrate having a surface, an implanted n-type channel region in the substrate, and implanted source and drain regions extending from the surface of the substrate into the implanted channel region. A gate contact is between the source and the drain regions, and an implanted p-type region is beneath the source region. The implanted p-type region has an end that extends towards the drain region, is spaced apart vertically from the implanted channel layer, and is electrically coupled to the source region. Methods of forming transistors including implanted channels and implanted p-type regions beneath the source region are also disclosed.