The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Apr. 13, 2009
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A method of manufacturing a thin silicon wafer by slicing a silicon single crystal includes: a thinning step Sof polishing a rear surface of the silicon wafer to reduce the thickness of the silicon wafer after a device structure is formed on a front surface of the silicon wafer; a mirror surface forming step Sof processing the rear surface of the silicon wafer into a mirror surface using a chemical mechanical polishing method; and a modifying step Sof dispersing abrasive grains that are harder than those used to form the mirror surface in the mirror surface forming process and forming a damaged layer, serving as a gettering sink for heavy metal, on the rear surface of the silicon wafer using the chemical mechanical polishing method. The thickness Tof the damaged layer Win a wafer depth direction is set by the chemical mechanical polishing method in the modifying step Sto control the gettering capability of the damaged layer.