The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
May. 07, 2009
Yu Chen, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Vincent Ho, Singapore, SG;
Bangun Indajang, Singapore, SG;
Yu Chen, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Vincent Ho, Singapore, SG;
Bangun Indajang, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with first and second regions with a first device layer. A second device layer including nanocrystals is also formed. A cover layer is provided over the second device layer. The cover layer is patterned to expose portions of the second device layer in the first and second regions. The exposed portions of the second device layer in the first and second regions are processed to form modified portions. The processing of the exposed portions at least reduces the nanocrystals to a diameter below a threshold diameter in the modified portions. The modified portions are removed.