The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Feb. 23, 2009
Applicants:
Kangguo Cheng, Guilderland, NY (US);
Byeong Yeol Kim, Lagrangeville, NY (US);
James Patrick Norum, Holmes, NY (US);
Inventors:
Kangguo Cheng, Guilderland, NY (US);
Byeong Yeol Kim, Lagrangeville, NY (US);
James Patrick Norum, Holmes, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A deep trench structure process for forming a deep trench in a silicon on insulator (SOI) substrate. The SOI substrate has a bulk silicon layer, a buried oxide (BOX) layer and an SOI layer. In the process, the trench fill is recessed only to a level within the SOI layer so as to avoid lateral etching of the BOX layer. The buried strap is then formed followed by the STI oxide.