The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jul. 02, 2007
Toshihiko Shiga, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Toshihiko Shiga, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiOfilm over the entire surface; forming a second resist pattern covering the SiOfilm in channels adjacent the waveguide ridge such that top surfaces of the second resist pattern in the channels are higher than the top surface of a p-GaN layer in the waveguide ridge and lower than the top surface of the SiOfilm on the top of the waveguide ridge, the second resist pattern exposing the top surface of the SiOfilm on the top of the waveguide ridge; removing the SiOfilm, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.