The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Sep. 17, 2007
Xueping Xu, Stamford, CT (US);
Robert P. Vaudo, Cary, NC (US);
Xueping Xu, Stamford, CT (US);
Robert P. Vaudo, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm, and a dislocation density standard deviation ratio of less than 25%, and methods of forming same, are disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 10pits/cmof the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.