The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Apr. 28, 2005
Munetaka Watanabe, Ichihara, JP;
Noritaka Muraki, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Yasushi Ohno, Ichihara, JP;
Munetaka Watanabe, Ichihara, JP;
Noritaka Muraki, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Yasushi Ohno, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.