The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Jul. 23, 2004
Applicants:
Kenichi Nishizawa, Nirasaki, JP;
Yasuhiro Terai, Nirasaki, JP;
Akira Asano, Nirasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.
Quick Actions:
Nishizawa, Kenichi. (2011). Fluorine doped carbon films produced by modification by radicals (U.S. Patent No. 7875549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7875549
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile