The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Nov. 07, 2008
Jung-hyun Lee, Suwon-si, KR;
Hion-suck Baik, Osan-si, KR;
Soon-ho Kim, Seoul, KR;
Jae-young Choi, Suwon-si, KR;
Jung-hyun Lee, Suwon-si, KR;
Hion-suck Baik, Osan-si, KR;
Soon-ho Kim, Seoul, KR;
Jae-young Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs.