The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Apr. 16, 2008
Junichi Sakano, Hitachi, JP;
Kenji Hara, Hitachi, JP;
Shinji Shirakawa, Hitachi, JP;
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Junichi Sakano, Hitachi, JP;
Kenji Hara, Hitachi, JP;
Shinji Shirakawa, Hitachi, JP;
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cmor less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.