The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Sep. 05, 2006
Noritaka Muraki, Chichibu, JP;
Hironao Shinohara, Ichihara, JP;
Hiroshi Osawa, Chiba, JP;
Show A Denko K.K., Tokyo, JP;
Abstract
The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, sequentially stacked on a substrate; a light-permeable positive electrodestacked on the p-type semiconductor layer; a positive electrode bonding padprovided on the light-permeable positive electrode; and a negative electrode bonding pad providedon the n-type semiconductor layer, wherein a disordered uneven surface formed at least on a part of the surfaceof the p-type semiconductor layer