The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2011

Filed:

Mar. 17, 2008
Applicants:

Yves Leduc, Roquefort les Pins, FR;

Nathalie Messina, Nice, FR;

Charvaka Duvvury, Plano, TX (US);

Kurt P. Wachtler, Richardson, TX (US);

Inventors:

Yves Leduc, Roquefort les Pins, FR;

Nathalie Messina, Nice, FR;

Charvaka Duvvury, Plano, TX (US);

Kurt P. Wachtler, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A packaged semiconductor device () with a substrate () having, sandwiched in an insulator (), a flat sheet-like sieve member () made of a non-linear material switching from insulator to conductor mode at a preset voltage. Both member surfaces are free of indentations; the member is perforated by through-holes, which are grouped into a first set () and a second set (). Metal traces () over one member surface are positioned across the first set through-holes (); each trace is connected to a terminal on the substrate top and, through the hole, to a terminal on the substrate bottom. Analogous for metal traces () over the opposite member surface and second set through-holes (). Traces () overlap with a portion of traces () to form the locations for the conductivity switches, creating local ultra-low resistance bypasses to ground for discharging overstress events.


Find Patent Forward Citations

Loading…