The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
May. 29, 2008
Tomihiro Hashizume, Hatoyama, JP;
Yuji Suwa, Kokubunji, JP;
Masaaki Fujimori, Kodaira, JP;
Tadashi Arai, Kumagaya, JP;
Takeo Shiba, Kodaira, JP;
Tomihiro Hashizume, Hatoyama, JP;
Yuji Suwa, Kokubunji, JP;
Masaaki Fujimori, Kodaira, JP;
Tadashi Arai, Kumagaya, JP;
Takeo Shiba, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.