The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Dec. 27, 2007
Ju-te Chen, Tainan, TW;
Wen-tsung Wu, Kaohsiung County, TW;
Ju-Te Chen, Tainan, TW;
Wen-Tsung Wu, Kaohsiung County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.